STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures-Reference-Cited by-同舟云学术

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STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures

Published:1986-12-01 Issue:6 Volume:1 Page:343-345
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Bullock J F,Titchmarsh J M,Humphreys C J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/1/i=6/a=001/pdf

Reference8 articles.

1. Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast

2. Transmission electron microscopy of interfaces in III–V compound semiconductors

3. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates

4. On the melting of incommensurate structures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Composition determination in InGaAs/InP multilayer structures by X-ray microanalysis in a STEM;Microscopy of Semiconducting Materials, 1987;2021-01-31

2. Definition of the spatial resolution of X-ray microanalysis in thin foils;Ultramicroscopy;1992-11

3. Composition determination in the GaAs/(Al, Ga)As system using contrast in dark-field transmission electron microscope images;Philosophical Magazine A;1989-07

4. X‐ray microanalysis of InGaAs/InP multilayer structures grown by metalorganic chemical vapor deposition;Journal of Applied Physics;1989-03-15

5. TRANSMISSION ELECTRON MICROSCOPY OF MULTILAYERED METAL AND SEMICONDUCTOR STRUCTURES;Le Journal de Physique Colloques;1987-11

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