CMOS-compatible spintronic devices: a review-Reference-Cited by-同舟云学术

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CMOS-compatible spintronic devices: a review

Published:2016-10-14 Issue:11 Volume:31 Page:113006
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Makarov Alexander,Windbacher Thomas,Sverdlov Viktor,Selberherr Siegfried

Funder

European Research Council

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/31/i=11/a=113006/pdf

Reference253 articles.

1. A 14nm logic technology featuring 2^nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm² SRAM cell size

2. Extreme scaling with ultra-thin Si channel MOSFETs

3. Spintronics: Fundamentals and applications

4. Semiconductor spintronics

5. Spin-Based Computing: Device Concepts, Current Status, and a Case Study on a High-Performance Microprocessor

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