Space charge effects in resonant tunnelling
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Importance of space‐charge effects in resonant tunneling devices
2. Resonant tunneling in semiconductor double barriers
3. A direct calculation of the tunnelling current. III. Effect of localized impurity states in the barrier
4. Tunneling theory without the transfer-Hamiltonian formalism. II. Resonant and inelastic tunneling across a junction of finite width
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3. Charge trapped in biased double‐barrier heterostructures;Journal of Applied Physics;1994-05-15
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