Electron localization in self-assembled Si quantum dots grown on Ge(111)-Reference-Cited by-同舟云学术

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Electron localization in self-assembled Si quantum dots grown on Ge(111)

Published:2015-11-16 Issue:12 Volume:30 Page:125013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Stepina N P,Zinovieva A F,Zinovyev V A,Deryabin A S,Kulik L V,Dvurechenskii A V

Funder

Russian Scientific Foundation

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=12/a=125013/pdf

Reference37 articles.

1. Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects

2. Electron Spin Echo Decay Behaviours of Phosphorus Doped Silicon

3. Relaxation of excited spin, orbital, and valley qubit states in ideal silicon quantum dots

4. Optically programmable electron spin memory using semiconductor quantum dots

5. Electronic structure of Ge/Si quantum dots

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