SOI Based metasurface for broadband perfect reflection in visible spectrum

Abstract

Abstract We propose modeling and design of a low-loss all-dielectric metasurface (DM), comprised of Silicon on Insulator (SiO2) substrate to demonstrate a perfect reflector in the visible spectrum. The proposed metasurface unit cell consists of V and W shapes arranged in a mirror image configuration, with nanometre-sized gaps (g) between them. A narrow peak with a nearly 100% reflectance and a broad perfect reflectance spectrum is observed within the visible region (400–700 nm) of the electromagnetic spectrum. The effective electromagnetic parameters were also analyzed for electric and magnetic dipole resonance. The electric and magnetic field distributions at the resonant wavelength were also analyzed for the proposed structure. By altering the gap region ‘g’, the thickness of the dielectric Silica layer (ts ), and the Si resonator (t m), the proposed structure exhibits tunable characteristics. We have successfully illustrated the consistent position of the scattering parameter’s response, regardless of the structure’s rotation, concluding the homogeneity of the designed structure across the entire visible spectrum. The all-DM exhibits a unique combination of features, including a distinct and wide reflectance spectrum as well as a tuned and enhanced electric field which makes it an ideal platform for the applications in filters, color printing, low-loss slow-light devices, and nonlinear optics.