A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,General Materials Science
Link
https://iopscience.iop.org/article/10.1088/2043-6262/6/3/035005/pdf
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1. Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs
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4. FinFETs and Other Multi-Gate Transistors
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