The nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their amorphous thin films-Reference-Cited by-同舟云学术

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The nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their amorphous thin films

Published:2011-06-02 Issue:7 Volume:13 Page:075203
ISSN:2040-8978
Container-title:Journal of Optics
language:
Short-container-title:J. Opt.

Author:

Karatay Ahmet,Aksoy Çagla,Yaglioglu H Gul,Elmali Ayhan,Kürüm Ulaş,Ateş Aytunç,Gasanly Nizami

Publisher

IOP Publishing

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. 2-ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror

2. Nonlinear and saturable absorption characteristics of amorphous InSe thin films

3. The effect of thickness and/or doping on the nonlinear and saturable absorption behaviors in amorphous GaSe thin films

4. Characterization of saturable absorbers using an open-aperture Gaussian-beamZscan

5. Z-scan theory of two-photon absorption saturation and experimental evidence

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