Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels-Reference-Cited by-同舟云学术

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Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels

Published:2009-01-08 Issue:01 Volume:2009 Page:P01047
ISSN:1742-5468
Container-title:Journal of Statistical Mechanics: Theory and Experiment
language:
Short-container-title:J. Stat. Mech.

Author:

Shiktorov P,Starikov E,Gružinskis V,Varani L,Sabatini G,Marinchio H,Reggiani L

Publisher

IOP Publishing

Subject

Statistics, Probability and Uncertainty,Statistics and Probability,Statistical and Nonlinear Physics

Reference11 articles.

1. Currents to Conductors Induced by a Moving Point Charge

2. Currents Induced by Electron Motion

3. Fluctuations and noise of hot carriers in semiconductor materials and devices

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