Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors-Reference-Cited by-同舟云学术

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Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors

Published:1990-01-15 Issue:2 Volume:2 Page:479-483
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Lambert B,Corre A Le,Toudic Y,Lhomer C,Grandpierre G,Gauneau M

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/2/i=2/a=022/pdf

Reference12 articles.

1. Excitation and decay mechanisms of the intra‐4fluminescence of Yb3+in epitaxial InP:Yb layers

2. Electrical properties of ytterbium‐doped InP grown by metalorganic chemical vapor deposition

3. Electrical activity of Yb in InP

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