A transmission electron microscopyin situstudy of dislocation mobility in Ge
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=330/pdf
Reference10 articles.
1. Dislocation mobility and electronic effects in semiconductor compounds
2. On the mobility of dislocations in silicon by in situ straining in a high-voltage electron microscope
3. Investigation of dislocation mobilities in germanium in the low-temperature range byin situstraining experiments
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1. In Situ Transmission Electron Microscopy;Springer Handbook of Microscopy;2019
2. A Continuous Model for the Wave Scattering by a Bounded Defective Domain;Advanced Structured Materials;2017
3. Frank Read sources in semiconductors;Acta Materialia;2007-04
4. Drag exerted on dislocation kinks in solid solutions;Physics of the Solid State;2007-02
5. Brother Silicon, Sister Germanium;Journal of The Electrochemical Society;2007
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