Holes bound as small polarons to acceptor defects in oxide materials: why are their thermal ionization energies so high?
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/23/i=33/a=334218/pdf
Reference42 articles.
1. O−bound small polarons in oxide materials
2. Theoretical description of hole localization in a quartz Al center: The importance of exact electron exchange
3. Hole localization in [AlO4]0 defects in silica materials
4. Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors
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