Phonon emission by photoexcited carriers in InGaN/GaN multiple quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference16 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
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1. Quantitative study of electron tunneling dynamics in asymmetric coupled InGaN/GaN quantum wells;Applied Optics;2020-07-10
2. Modulation Intersubband Absorption and the Hot Electron Mechanism in Heterostructure of Al1-yInyN/Ga1-xInxN;CHINESE J PHYS;2014
3. Ultrafast electron dynamics in GeSi nanostructures;Physical Review B;2012-01-17
4. The In compositional gradation effect on photoluminescence in InGaN/GaN multi-quantum-well structures;Journal of Physics: Condensed Matter;2006-03-02
5. Phonon transport in 6H silicon carbide;Semiconductor Science and Technology;2002-11-28
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