Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/24/i=14/a=145304/pdf
Reference40 articles.
1. Spin Physics in Semiconductors
2. Electron spin relaxation by nuclei in semiconductor quantum dots
3. Electron Spin Decoherence in Quantum Dots due to Interaction with Nuclei
4. Electrical Control of Hole Spin Relaxation in Charge TunableInAs/GaAsQuantum Dots
5. Spin Relaxation Quenching in Semiconductor Quantum Dots
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2. Verification of Bruno-Gnanasekar- Karunakaran- Chandramohan observation in non-magnetic semiconductor/diluted magnetic semiconductor heterostructure;Superlattices and Microstructures;2017-12
3. Understanding and optimizing spin injection in self-assembled InAs/GaAs quantum-dot molecular structures;Nano Research;2016-02-01
4. Increase in the efficiency of spin detection based on GaAsSb by applying a longitudinal magnetic field or a postgrowth annealing process;APPL PHYS EXPRESS;2016
5. Anomalous spectral dependence of optical polarization and its impact on spin detection in InGaAs/GaAs quantum dots;Applied Physics Letters;2014-09-29
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