Theoretical calculation of the dislocation width and Peierls barrier and stress for semiconductor silicon
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/22/i=5/a=055801/pdf
Reference61 articles.
1. Dislocation dynamics in the plastic deformation of silicon crystals I. Experiments
2. Yield point and dislocation mobility in silicon and germanium
3. On the yield point of floating-zone silicon single crystals
4. The plastic deformation of silicon between 300°C and 600°C
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