Thermal etching defect structures on Si(001): a comparative study with high-resolution low-energy electron diffraction and scanning tunnelling microscopy-Reference-Cited by-同舟云学术

Thermal etching defect structures on Si(001): a comparative study with high-resolution low-energy electron diffraction and scanning tunnelling microscopy

Published:1995-07-03 Issue:27 Volume:7 Page:5313-5326
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Munz A W,Weiss W,Gopel W

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/7/i=27/a=016/pdf

Reference45 articles.

1. Theory of reconstruction induced subsurface strain — application to Si(100)

2. Possible structures for clean, annealed surfaces of germanium and silicon

3. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth

4. Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy

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