Electronic states in lateral-surface-superlattice quantum well wires
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/4/i=31/a=007/pdf
Reference7 articles.
1. Bound impurity in GaAs-Ga1−κAlκAs quantum-well wires
2. Analytical results for semiconductor quantum-well wire: Plasmons, shallow impurity states, and mobility
3. MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells
4. Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum Confinement
5. Formation of planar superlattice states in new grid‐inserted quantum well structures
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1. Parametrized equations for excitons in quantum wires;Semiconductor physics, quantum electronics and optoelectronics;2008-06-30
2. Exciton binding energy in V-shaped GaAs–Ga1−xAlxAs quantum wires;Solid State Communications;2001-06
3. Shallow acceptor impurity states in V-shaped GaAs-Ga1 -xAlxAs quantum wires;Journal of Physics: Condensed Matter;2000-03-15
4. Optical absorption spectra associated with an impurity in lateral-surface superlattice quantum well wires;Journal of Physics: Condensed Matter;1995-02-13
5. Miniband structures and densities of impurity states in lateral-surface-superlattice quantum well wires;Journal of Physics: Condensed Matter;1994-07-18
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