Modelling of paramagnetic trivalent silicon defect centres in amorphous silica and at Si–SiO2 interfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=21/a=006/pdf
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First-Principles Study on the Impact of Stress on Depassivation of Defects at a-SiO2/Si Interfaces;Frontiers in Materials;2022-05-04
2. Passivation and dissociation of P b-type defects at a-SiO2/Si interface*;Chinese Physics B;2021-09-01
3. Hydroxyl E' center and stress-assisted proton generation in hydrogen-rich amorphous silica;Computational Materials Science;2020-09
4. Structural, elastic, vibrational and electronic properties of amorphous Sm2O3 from Ab Initio calculations;Computational Materials Science;2019-11
5. First-principles study of defects in amorphous-SiO2/Si interfaces;Applied Surface Science;2019-07
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