Collective cyclotron modes in high-mobility two-dimensional hole systems in GaAs - (Ga, Al)As heterojunctions: I. Experiments at low magnetic fields and theory-Reference-Cited by-同舟云学术

Collective cyclotron modes in high-mobility two-dimensional hole systems in GaAs - (Ga, Al)As heterojunctions: I. Experiments at low magnetic fields and theory

Published:1997-04-14 Issue:15 Volume:9 Page:3163-3179
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Cole B E,Peeters F M,Ardavan A,Hill S O,Singleton J,Batty W,Chamberlain J M,Polisskii A,Henini M,Cheng T

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference46 articles.

1. Cyclotron resonance of high-mobility GaAs/AlGaAs (311) 2DHGs

2. Growth of p- and n-type GaAs/(AlGa)As double barrier resonant tunneling devices on (311)A and (111)B substrate orientations

3. High magnetic field millimetre and submillimetre spectroscopy of ultra-high mobility 2D hole systems

4. Energy Structure and Quantized Hall Effect of Two-Dimensional Holes

5. Anomalous cyclotron-resonance line splitting of two-dimensional holes in (311)AAlxGa1−xAs/GaAs heterojunctions

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