Domain wall pinning in ultra-narrow electromigrated break junctions-Reference-Cited by-同舟云学术

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Domain wall pinning in ultra-narrow electromigrated break junctions

Published:2014-10-29 Issue:47 Volume:26 Page:474207
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Reeve Robert M,Loescher André,Mawass Mohamad-Assaad,Hoffmann-Vogel Regina,Kläui Mathias

Funder

COMATT

Kompetenznetz Funktionell nanostrukturen Landesstiftung Baden Württemberg

Graduate School of Excellence Materials Science In Mainz

CINEMA

European Research Council

Deutsche Forschungsgemeinschaft

Samsung

EU

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/26/i=47/a=474207/pdf

Reference69 articles.

1. Quantum properties of atomic-sized conductors

2. Absence of magnetically induced fractional quantization in atomic contacts

3. Anisotropic magnetoresistance in nanocontacts

4. Giant anisotropic magneto-resistance in ferromagnetic atomic contacts

5. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local spin transfer torque and magnetoresistance in domain walls with variable width;Physical Review B;2020-08-06

2. Scaling of intrinsic domain wall magnetoresistance with confinement in electromigrated nanocontacts;Physical Review B;2019-06-25

3. Gilbert damping in binary magnetic multilayers;Physical Review B;2017-04-25

4. Detection of ferromagnetic domain wall pinning and depinning with a semiconductor device;Journal of Applied Physics;2015-12-21

5. Break junctions;Journal of Physics: Condensed Matter;2014-10-29

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