Surface and near surface defects inδ-doped Si(1 1 1)
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/27/i=12/a=125001/pdf
Reference26 articles.
1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
2. Two-Dimensional Magnetotransport in the Extreme Quantum Limit
3. Delta doping in silicon
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2. Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy;Journal of Physics: Condensed Matter;2019-10-24
3. Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks;Surface Science Reports;2017-09
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