First principles study of As–vacancy interaction and the ring mechanism of diffusion in the presence of Ge in Si
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/18/i=20/a=012/pdf
Reference20 articles.
1. Rapid thermal annealing of arsenic implanted Si1−xGex epilayers
2. Arsenic diffusion in relaxedSi1−xGex
3. Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys
4. Heavy doping effects in the diffusion of group IV and V impurities in silicon
5. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon
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1. Ring mechanism of fast Na+ ion transport in Na2LiFeTeO6 : Insight from molecular dynamics simulation;Physical Review Materials;2022-04-29
2. Experiments and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium;Journal of Applied Physics;2010-07-15
3. Ab initiocalculations of arsenic in silicon: Diffusion mechanism and strain dependence;Physical Review B;2010-05-26
4. Dopant-vacancy cluster formation in germanium;Journal of Applied Physics;2010-04
5. Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium;Journal of Applied Physics;2008-12
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