Passivation of boron in silicon by hydrogen and muonium: calculation of electric field gradients, quadrupole resonance frequencies and cross relaxation functions-Reference-Cited by-同舟云学术

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Passivation of boron in silicon by hydrogen and muonium: calculation of electric field gradients, quadrupole resonance frequencies and cross relaxation functions

Published:1991-12-02 Issue:48 Volume:3 Page:9675-9686
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Maric Dj M,Meier P F,Vogel S,Cox S F J,Davis E A,Schneider J W

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/3/i=48/a=009/pdf

Reference42 articles.

1. Muonium states in semiconductors

2. Molecular radical models for the muonium centres in solids

3. Si29Hyperfine Structure of Anomalous Muonium in Silicon: Proof of the Bond-Centered Model

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of a crossover from nodal to gapped superconductivity in LuxZr1−xB12;Physical Review B;2018-09-05

2. Dynamics and Reactivity of Positively Charged Muonium in Heavily Doped Si:B and Comparisons with Hydrogen;Physical Review Letters;2008-06-24

3. Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond;Physical Review Letters;2005-09-02

4. Charge dynamics of muonium centers in Si revealed by photoinduced muon spin relaxation;Physical Review B;2003-12-29

5. Chapter 4 μSR on Muonium in Semiconductors and Its Relation to Hydrogen;Semiconductors and Semimetals;1998

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