The role of charge carriers in the memory effect in the incommensurate phase of the semiconducting ferroelectric Sn2P2Se6-Reference-Cited by-同舟云学术

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The role of charge carriers in the memory effect in the incommensurate phase of the semiconducting ferroelectric Sn2P2Se6

Published:1994-12-12 Issue:50 Volume:6 Page:11211-11220
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Maior M M,Rasing T,Eijt S W H,Loosdrecht P H M van,Kempen H van,Molnar S B,Vysochanskii Yu M,Motrij S F,Slivka V Yu

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/6/i=50/a=027/pdf

Reference15 articles.

1. Observation of a new memory effect in a modulated structure

2. Theory of the memory effect in thiourea. Defect density waves in modulated systems

3. Pinning effects in incommensurately modulated structures

4. Optical Study of Time Variation of Memory Effect in Incommensurate Phase of Quartz

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2. Integration of first-principles methods and crystallographic database searches for new ferroelectrics: Strategies and explorations;Journal of Solid State Chemistry;2012-11

3. Effect of external fields on the memory effect of the incommensurate phase in the ferroelectric-semiconductor TlGaSe2;Physics of the Solid State;2008-01

4. Low valent phosphorus in the molecular anions [P5Se12]5– and β-[P6Se12]4–: phase change behavior and near infrared second harmonic generation;Chemical Communications;2007

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