Interface confinement and local structure in nc-Si/a-SiNxmultilayers (nc≡nanocrystalline, a≡amorphous)-Reference-Cited by-同舟云学术

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Interface confinement and local structure in nc-Si/a-SiNxmultilayers (nc≡nanocrystalline, a≡amorphous)

Published:2001-10-19 Issue:44 Volume:13 Page:9857-9865
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Wang Li,Wang Xiaowei,Huang Xinfan,Li Zhifeng,Ma Zhongyuan,Zhang Lin,Bao Yun,Shi Jianjun,Li Wei,Huang Xiaohui,Xu Jun,Chen Kunji

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Control of Thickness and Orientation of Solution-Grown Silicon Nanowires

3. Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO2

4. Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum‐well structures

5. Observation of the size-dependent blueshifted electroluminescence from nanocrystalline Si fabricated by KrF excimer laser annealing of hydrogenated amorphous silicon/amorphous-SiNx:H superlattices

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of sublayer thickness and annealing on silicon nanostructures formation in a -Si:H/ a -SiN x :H superlattices for photovoltaics;Vacuum;2018-07

2. Poole-Frenkel emission and defect density in a-Si:H/nc-Si:H multilayer films for “all silicon” third generation photovoltaics;Thin Solid Films;2018-05

3. Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films;Materials Science in Semiconductor Processing;2013-12

4. SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW;Nano;2009-10

5. Fabrication of silicon quantum dots in SiNx multilayer using hot-wire CVD;Journal of Crystal Growth;2009-04

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