Structural and electrical non-uniformities in thin CdTe layers grown on InSb by MBE
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/3/i=S/a=038/pdf
Reference7 articles.
1. Characteristics of II-VI semiconductor thin films grown by MBE on InSb substrates
2. The relationship between electrical and structural characteristics of CdTe and CdMnTe layers grown on InSb
3. Arsenic‐doped CdTe epilayers grown by photoassisted molecular beam epitaxy
4. Photoluminescence spectroscopy of CdTe grown by photoassisted MBE
5. Photoassisted molecular beam epitaxy of wide gap II–VI heterostructures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of misfit dislocations on the electrical properties of CdTe layers grown by molecular beam epitaxy on InSb;Applied Physics Letters;2004-05-17
2. Fabrication and magnetoconductance studies on submicron wires and films of MBE grown CdTe:In;Thin Solid Films;1997-09
3. Properties of epitaxially grown CdTe layers doped with indium;Thin Solid Films;1995-10
4. Nitrogen doping of molecular beam epitaxially grown CdTe with a radio-frequency plasma source;Journal of Crystal Growth;1994-04
5. Investigation of the effect of quantum well width on the binding energy of excitons to neutral donors;Superlattices and Microstructures;1993-12
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