Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=31/a=016/pdf
Reference48 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime
5. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
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