Evolution of Raman spectra as a function of layer thickness in ultra-thin InSe films
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=5/a=302/pdf
Reference30 articles.
1. Ultrasharp interfaces grown with Van der Waals epitaxy
2. Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur‐terminated GaAs{111} surfaces
3. Single crystalline GaSe/WSe2heterointerfaces grown by van der Waals epitaxy. I. Growth conditions
4. The van der Waals epitaxial growth of GaSe on Si(111)
5. Epitaxy of layered compounds: GaSe on Si(111)
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