Enhanced mixing characteristics of GaAs/3,4,9,10-perylenetetracarboxylic dianhydride Schottky diodes
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/15/i=38/a=002/pdf
Reference15 articles.
1. Organic‐on‐inorganic semiconductor contact barrier diodes. I. Theory with applications to organic thin films and prototype devices
2. Organic-on-Inorganic Heterostructure Diodes for Microwave Applications
3. Tuning Schottky barrier heights by organic modification of metal-semiconductor contacts
4. Energy level alignment driven by electron affinity difference at 3,4,9,10-perylenetetracarboxylic dianhydride/n-GaAs(100) interfaces
5. Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer
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1. A study of the rectifying behaviour of aniline green-based Schottky diode;Microelectronic Engineering;2010-02
2. Fabrication and electrical properties of Al/aniline green/n-Si/AuSb structure;Materials Science in Semiconductor Processing;2008-04
3. Organic-GaAs heterostructure diodes for microwave applications;Applied Surface Science;2004-07
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