ZnO gap engineering by doping with III–V compounds
Author:
Funder
Division of Mathematical Sciences
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/28/i=3/a=035803/pdf
Reference46 articles.
1. High mobility formation of p-type Al doped ZnO:N films annealed under NH3 ambient
2. First-Principles Studies of the Structural and Electronic Properties of the (Ga1-xZnx)(N1-xOx) Solid Solution Photocatalyst
3. A Full Compositional Range for a (Ga1-xZnx)(N1-xOx) Nanostructure: High Efficiency for Overall Water Splitting and Optical Properties
4. Elementary Electronic Structure
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