The origin of oxygen vacancy induced ferromagnetism in undoped TiO2
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=19/a=195405/pdf
Reference21 articles.
1. Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors
2. Unexpected magnetism in a dielectric oxide
3. Room-temperature ferromagnetism observed in undoped semiconducting and insulating oxide thin films
4. Oxygen-defect-induced magnetism to 880 K in semiconducting anatase TiO2−δfilms
5. Observation of ferromagnetism at room temperature in ZnO thin films
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