Optical absorption measurements of band-gap shrinkage in moderately and heavily doped silicon
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/3/i=42/a=016/pdf
Reference25 articles.
1. Heavily doped semiconductors and devices
2. The effect of electron interaction on the band gap of extrinsic semiconductors
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4. Energy gap in Si and Ge: Impurity dependence
5. Band-gap narrowing in heavily doped many-valley semiconductors
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