Charge transfer between isomer domains on n+-doped Si(111)-2 × 1: energetic stabilization
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Surface Structures and Properties of Diamond-Structure Semiconductors
2. Newπ-Bonded Chain Model for Si(111)-(2×1) Surface
3. Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, andπ-Bonded Chains
4. Infrared reflectance anisotropy spectroscopy ofSi(111)−2×1: Surface excitons and polarons
5. Structural and Optical Properties of the Ge(111)-(2×1) Surface
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3. Confinement effects in π-bonded chains at group IV semiconductor (111) surfaces;Journal of Physics: Condensed Matter;2013-11-07
4. Electronic disorder of P- and B-doped Si at the metal–insulator transition investigated by scanning tunnelling microscopy and electronic transport;New Journal of Physics;2013-05-15
5. Geometric, electronic, and optical properties of the Si(111)2×1 surface: Positive and negative buckling;Physical Review B;2012-12-14
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