Electronic and structural properties of group III nitrides and phosphides using density functional theory
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/21/i=2/a=025501/pdf
Reference30 articles.
1. Emerging gallium nitride based devices
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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