Metallic transport properties of amorphous nickel - silicon films-Reference-Cited by-同舟云学术

Metallic transport properties of amorphous nickel - silicon films

Published:1997-06-23 Issue:25 Volume:9 Page:5395-5411
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Rosenbaum R,Heines A,Palevski A,Karpovski M,Gladkikh A,Pilosof M,Daneshvar A J,Graham M R,Wright T,Nicholls J T,Adkins C J,Witcomb M,Prozesky V,Przybylowicz W,Pretorius R

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference57 articles.

1. The effect of hydrogenation on the electronic properties of amorphous silicon-nickel alloys near the metal-insulator transition

2. Conductivity of r.f.-sputtered Ni 100 − x −Si x thin films with 33 ⩽ x ⩽ 77 at.%

3. Conductivity and magnetoresistance of hydrogenated amorphous silicon-nickel alloys near the metal-insulator transition

4. Hopping conduction in hydrogenated amorphous Si1-yNiy

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