Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge-Reference-Cited by-同舟云学术

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Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge

Published:2010-05-05 Issue:21 Volume:22 Page:216006
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Gunnella R,Morresi L,Pinto N,Di Cicco A,Ottaviano L,Passacantando M,Verna A,Impellizzeri G,Irrera A,d’Acapito F

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/22/i=21/a=216006/pdf

Reference43 articles.

1. A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x

2. Electrical spin injection in a ferromagnetic semiconductor heterostructure

3. Semiconductors — Basic Data

4. Ferromagnetism in Mn-doped Ge

5. Spatial Chemical Inhomogeneity and Local Electronic Structure of Mn-Doped Ge Ferromagnetic Semiconductors

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1. Oxide Coating Role on the Bulk Structural Stability of Active LiMn₂O₄ Cathodes;The Journal of Physical Chemistry C;2023-05-03

2. Spontaneous shape transition of MnxGe1−x islands to long nanowires;Beilstein Journal of Nanotechnology;2021-04-28

3. Polycrystalline MnGe2 thin films on InAs(001) substrates;Thin Solid Films;2018-07

4. Long-range magnetic interaction in Mn $$_{x}$$ x Ge $$_{1-x}$$ 1 - x : structural, spectromicroscopic and magnetic investigations;Journal of Materials Science;2016-12-05

5. Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc MnxGe1−x nanomesh;Nature Communications;2016-10-20

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