Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=22/a=022/pdf
Reference33 articles.
1. Infrared Studies of Defect Production inn-Type Si: Irradiation-Temperature Dependence
2. Self‐interstitials and the 935 cm−1band in silicon
3. Metastable oxygen - silicon interstitial complex in crystalline silicon
4. Self-interstitial-oxygen related defects in low-temperature irradiated Si
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