Elastic characterizations of α-GaPO4single crystals grown by the flux method
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/20/i=2/a=025226/pdf
Reference27 articles.
1. Etude comparée à diverses températures (173, 293 et 373°K) des structures de type quartz α des phases MIIIXVO4 (MIII = Al, Ga et XV = P, As)
2. A quartz-like material: gallium phosphate (GaPO4); crystal growth and characterization
3. Gallium phosphate, GaPO4: a new piezoelectric crystal material for high-temperature sensorics
4. Properties of AT cut gallium phosphate resonators
5. Elastic, piezoelectric, and dielectric properties of α-GeO2 single crystals
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1. Ab initio study of temperature-dependent piezoelectric and electronic properties of thermally stable GaPO4;Physical Chemistry Chemical Physics;2024
2. GaPO4 Single Crystals: Growth Condition by Hydrothermal Refluxing Method;Molecules;2020-10-02
3. Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues;Crystals;2014-06-23
4. First-principles study of structural, elastic, electronic and optical properties of orthorhombic GaPO4;Solid State Sciences;2011-05
5. Temperature Dependence of Single-Crystal Elastic Constants of Flux-Grown α-GaPO4;Inorganic Chemistry;2009-04-27
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