The strong correlation of the 4f electrons of erbium in silicon
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/15/i=9/a=307/pdf
Reference21 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
3. Indirect excitation of 1.5 μm emission from Er3+ in silicon-rich silica
4. Description of the trends for rare-earth impurities in semiconductors
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