X-ray standing wave study of alkali-metal/silicon interfaces
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/5/i=33A/a=009/pdf
Reference21 articles.
1. The structure and properties of metal-semiconductor interfaces
2. Initial formation process of metal/silicon interfaces
3. Recent developments on metal-silicon interfaces
4. Optimized structures and electronic properties of alkali-metal (Na, K) -adsorbed Si(001) surfaces
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1. Surface structure determination using x-ray standing waves;Reports on Progress in Physics;2005-03-09
2. Growth of thallium overlayers on a Si(100) surface;Physical Review B;2005-01-12
3. Growth of thallium overlayers on Si(100) surface: Ab initio molecular dynamics study;e-Journal of Surface Science and Nanotechnology;2005
4. The (3×2) phase of Ba adsorption on Si(001)-2×1;Surface Science;2000-01
5. The Schottky barrier height of caesium on n-Si(111)-7 × 7 surfaces;Journal of Physics: Condensed Matter;1999-10-15
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