Quantised Hall effect and magnetoresistance through a quantum point contact-Reference-Cited by-同舟云学术

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Quantised Hall effect and magnetoresistance through a quantum point contact

Published:1989-10-09 Issue:40 Volume:1 Page:7499-7503
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Snell B R,Beton P H,Main P C,Neves A,Owers-Bradley J R,Eaves L,Henini M,Hughes O H,Beaumont S P,Wilkinson C D W

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Quantized conductance of point contacts in a two-dimensional electron gas

2. One-dimensional transport and the quantisation of the ballistic resistance

3. Four-terminal magnetoresistance of a two-dimensional electron-gas constriction in the ballistic regime

4. Quantized Hall conductance, current-carrying edge states, and the existence of extended states in a two-dimensional disordered potential

5. Absence of backscattering in the quantum Hall effect in multiprobe conductors

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1. Imaging the Conductance of Integer and Fractional Quantum Hall Edge States;Physical Review X;2014-01-30

2. Mechanistic understanding of transition between quantized conductance plateaus under strain perturbation;Physical Review B;2008-07-29

3. Quantum Hall effect transition in scanning gate experiments;Physical Review B;2007-08-10

4. Edge and bulk transport in variably connected quantum Hall conductor;Physical Review B;1996-12-15

5. Illumination-induced inhomogeneity in the carrier density profile of split gate devices;Semiconductor Science and Technology;1996-07-01

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