GaN/AlN quantum dots for single qubit emitters
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/20/i=45/a=454211/pdf
Reference39 articles.
1. Electrically driven single quantum dot polarised single photon emitter
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4. Narrow photoluminescence peaks from localized states in InGaN quantum dot structures
5. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
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4. Contribution of piezoelectric and deformation-potential coupling mechanisms on the excitonic line shape of a single GaN/AlN quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2019-02
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