Author:
Csányi Gábor,Engeness Torkel D,Ismail-Beigi Sohrab,Arias T A
Subject
Condensed Matter Physics,General Materials Science
Cited by
7 articles.
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1. Characterization of dislocation-based nanotransistors;16th International Workshop on Physics of Semiconductor Devices;2012-10-15
2. Dislocation-Based Si-Nanodevices;Japanese Journal of Applied Physics;2010-04-20
3. Molecular dynamics studies of the dissociated screw dislocation in silicon;Journal of Physics: Condensed Matter;2010-02-03
4. Dislocation Networks Formed by Silicon Wafer Direct Bonding;Materials Science Forum;2008-08
5. Silicon, paramagnetic centers: principal values of g-tensors of cubic centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements