Transport properties of 2H-NbSe2 synthesized by selenization of Nb thin films

Abstract

Abstract A novel method for the synthesis of 2H-NbSe2 thin films by selenization of precursor Nb thin films is reported. The polycrystalline films grow predominantly in the hexagonal 2H-NbSe2 phase with bulk lattice constants. Their remarkable microstructure consists of a three-dimensional network of flake-like grains substantially stacked vertically on the substrate. The electronic transport between 1.2 K and 300 K in zero and applied magnetic fields up to 14 T has been extensively studied. The study comprises resistivity, magnetoresistance, Hall coefficient, upper critical field, and critical current density. The results are discussed taking account of the coexisting charge-density-wave and superconducting phases.