Abstract
Abstract
Storage of a single magnetic flux quantum in a superconducting loop containing a Josephson junction represents a promising unit cell configuration for construction of a cryogenic memory of superconducting digital circuits. However, application of a DC bias current is required for operation of such a memory cell to maintain trapping of the flux quantum in the storage loop. In this work, we present a superconducting memory cell that uses a superconducting-magnetic π junction. The cell characteristics show flux quantum hysteresis centering at the zero-bias current. We develop a fabrication process that combines superconductor–ferromagnet–superconductor (SFS) junctions with superconductor–normal metal–superconductor (SNS) junctions. The critical current density of the SFS junctions shows a 0–π oscillation as a function of the ferromagnetic layer thickness. The formation of the π junction is confirmed further by the flux modulation curves of a superconducting quantum interference device made from SNS junctions with an additional SFS junction.
Funder
National Natural Science Foundation of China
Shanghai Sail Program
Young Investigator program of the CAS
Frontier Science Key Programs of CAS
Strategic Priority Research program of CAS
Superconducting Electronics Facility
Subject
Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Condensed Matter Physics,Ceramics and Composites
Cited by
3 articles.
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