Apparent and steady-state etch rates in thin film etching and under-etching of microstructures: II. Characterization-Reference-Cited by-同舟云学术

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Apparent and steady-state etch rates in thin film etching and under-etching of microstructures: II. Characterization

Published:2010-04-29 Issue:5 Volume:20 Page:055034
ISSN:0960-1317
Container-title:Journal of Micromechanics and Microengineering
language:
Short-container-title:J. Micromech. Microeng.

Author:

Van Barel Gregory,Du Bois Bert,Van Hoof Rita,De Wachter Jef,De Ceuninck Ward,Witvrouw Ann

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Etching Mechanism of Vitreous Silicon Dioxide in HF-Based Solutions

2. Hydrofluoric Acid Etching of Silicon Dioxide Sacrificial Layers: I . Experimental Observations

3. Etching Mechanism of Silicon Nitride in HF-Based Solutions

4. Etching of CVD Si3 N 4 in Acidic Fluoride Media

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An innovative methodology for monitoring the sacrificial layer removal process in MEMS structures;Physica Scripta;2024-02-16

2. Test Structure for Measuring the Selectivity in XeF2 and HF Vapour Etch Processes;IEEE Transactions on Semiconductor Manufacturing;2021-08

3. Apparent and steady-state etch rates in thin film etching and under-etching of microstructures: I. Modelling;Journal of Micromechanics and Microengineering;2010-04-29

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