Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aa7eb9/pdf
Reference27 articles.
1. Nanowire transistors without junctions
2. Reduced electric field in junctionless transistors
3. Low-temperature electron mobility in Trigate SOI MOSFETs
4. Observation of Degenerate One-Dimensional Subbands in Single n-Channel Junctionless Nanowire Transistors
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