The properties of perovskite solar cells with novel MAPbBr3/CsPbBr3 double absorber

Author:

He Bolong,Liu LinlinORCID,Hu Jialong,Nie Shu,Chen Yihui,Chen YonshengORCID

Abstract

Abstract Perovskite solar cells (PSCs) based on CsPbBr3 have garnered considerable attention due to their high stability and all-inorganic components. Although thermal annealing is a conventional and effective method to improve the quality of CsPbBr3 films, property improvement strategies are still scarce, especially for the vapor deposition process. In this work, a MAPbBr3 layer is introduced at the TiO2 and CsPbBr3 interface to construct a double-absorber heterojunction structure. It is found that the cubic phase of CsPbBr3 is formed directly on the MAPbBr3 underlayer due to the epitaxial growth. Furthermore, the heterojunction formed at the MAPbBr3/CsPbBr3 interface contributes to the superior extraction of the light-generated carriers. A power conversion efficiency (PCE) of 6.53% is obtained for the PSC with a double-absorber design. Despite the thickness of the epitaxial layer being shrunken after annealing at 150 °C for 30 min, a PCE of 5.90% is achieved, indicating the high thermal stability of the double-absorber device. Our work provides a new insight into quality engineering for the perovskite deposited by the vapor deposition process.

Funder

Project of Science and Technology Tackling Key Problems in Henan Province of China

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3