Multilevel thermal memory cell based on cyclic temperature experiment under glassy phase of frustrated magnet

Abstract

Abstract We depict here that the value of the relaxed magnetization follows a unique path for each temperature below the phase transition temperature ( T c 2 ) for pristine C a 3 C o 2 O 6 and its substituents. Here we propose a way to access these paths by cyclic thermal manipulations. Thus the magnetization corresponding to each temperature below T c 2 can be utilized in multilevel data storage that has a potential application in the thermal memory cell. Furthermore, these results were compared with another route used in the thermal memory cell and were proven more efficient and faster than the latter one.