Perpendicular magnetic properties and field-free current-induced switching in W/CoFeB/MgO trilayers with a compensating oblique W underlayer

Abstract

Abstract Zero-field magnetization switching (ZFS) driven by current-induced spin–orbit torque (SOT) holds significant importance in spintronic applications. The introduction of a lateral asymmetric structure (LAS) through oblique deposition proves to be an effective strategy for breaking inversion symmetry, thereby enabling SOT-driven ZFS. However, the coexistence of wedge thickness structure and slanted columnar microstructure in the obliquely deposited films poses challenges in distinguishing their respective effects. In this study, we conducted a comparative investigation of the perpendicular magnetic properties and current-induced switching in W/Co40Fe40B20/MgO films by oblique sputtering of the W underlayer at a fixed tilting angle and at two opposite tilting angles with its wedge thickness compensated. We have found that the perpendicular magnetic properties of the Co40Fe40B20 layer are significantly altered at large tilting angles, irrespective of whether the W wedge thickness is compensated. Notably, at a tilting angle of 50°, ZFS is realized for both the conventional oblique sample and the compensating oblique sample, with the switching polarity contingent on the final tilting direction of the W layer. We have identified a gradient in perpendicular magnetic anisotropy in these samples, attributed to the laterally varying roughness associated with the slanted columnar microstructure of the W underlayer. This study underscores the dominant role of microscopic LAS in obliquely deposited films in breaking SOT symmetry. Our research sheds light on the impact of the slanted columnar microstructure on the magnetic and magneto-transport properties of films, offering valuable insights for advancing spintronic device research.