Abstract
Abstract
Wide-gap semiconductors are essential for current optoelectronics due to the good conductivity and transparency. Although the significant successes have been achieved for n-type transparent conducting materials (TCMs), the p-type TCMs seriously lag behind the n-type counterparts, which severely hinder the developments of the high-performance transparent electronic devices. In present work, we predict the transparent ambipolar conducting can be obtained in SrS by utilizing the hybrid functional method. The Cl substituting S and K substituting Sr (labeled as ClS and KSr) are typical shallow donor and acceptor defects. Compared to conduction band minimum (valence band maximum), the ionization energies for ClS (KSr) would converge to 0.02 (0.14) eV. Using the equilibrium fabricate method, the free electrons (holes) density can reach 1.24 × 1019 cm−3 (1.23 × 1018 cm−3) at room temperature. The effective masses for electron and hole are 0.32 and 0.87 m
0 (m
0 is the mass of a free electron). In the visible light regions, the high transparency can be kept due to its weak inter-band and intra-band absorptions as well as the negligible plasmonic effect. High density of carriers, smaller effective mass and high transparency show SrS doped with Cl and K is a promising ambipolar transparent semiconductor. This work provides insights to realize the high performance ambipolar TCMs. Once the excellent ambipolar TCMs is explored, the high-performance transparent devices are expected in the future.
Funder
Science and Technology Foundation of Yichang
National Natural Science Foundation of China
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献